Stanford Optics manufactures silicon wafers with diameters ranging from 1″ (50.8 mm) to 12″ (304.8 mm), thereby offering maximum flexibility. To accommodate the widest array of specifications, we employ either Czochralski (Cz) or Float Zone (FZ) silicon wafer fabrication methods.
Silicon wafers are the cornerstone of semiconductor manufacturing, integral to the production of all electronic devices that enhance our daily lives. Renowned for their versatility and exceptional electrical properties, silicon wafers are the most widely utilized material across a multitude of high-tech industries. The unique electrical characteristics of silicon enable the creation of integrated circuits (ICs), which serve as the fundamental commands driving various electronic applications.
CZ or FZ Wafer |
Prime Wafer |
Intrinsic Wafer |
Test Wafer |
Heavily Doped Wafer |
High Resistivity Wafer |
Off Axis Orientation Wafer |
Special Orientation Wafer |
Ultra Flat Wafer |
Ultra-Thin Wafer |
Ultra Thick Wafer |
Double Sides Polished |
Thermal Oxide Wafer |
Epi Wafer |
Silicon wafers serve a pivotal role in a diverse array of applications, including but not limited to:
Growth |
CZ / FZ |
Diameter |
Ø 1" / Ø 2" / Ø 3" / Ø 4" / Ø 6" / Ø 8" / Ø 12" |
Thickness |
275 um ~ 775 um |
Orientation |
<100> / <111> / <110> or others |
SIIConductivity |
P - type / N - type / intrinsic |
Dopant |
Boron / Phosphorous / Antimony / Arsenic |
Resistivity |
0.001 ~ 10000 ohm-cm |
Surface |
One side polished / two sides polished |
TTV |
<= 10 um |
Bow / Warp |
<= 40 um |
Grade |
Prime / Test / Dummy grade |
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